高周波スパッタ法によるTa<SUB>2</SUB>O<SUB>5</SUB>陽極化成膜上へのSiO<SUB>2</SUB>薄膜付着
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概要
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Here, deposition of SiO<SUB>2</SUB> film by RF-sputtering onto the anodic Ta<SUB>2</SUB>O<SUB>5</SUB> film for fabrication of an SiO<SUB>2</SUB>-Ta<SUB>2</SUB>O<SUB>5</SUB> thin film capacitor is reported. Reproducible film deposition rate is achieved within the accuracy of 3% by decreasing the influence of adsorbed gases in the vacuum chamber. Argon pressure is adjusted in order to obtain the uniform deposition of the SiO<SUB>2</SUB> film. The thickness distribution is less than 3% within the area covered by 70% of target radius. The standard deviation of capacitance due to the distribution of SiO<SUB>2</SUB> films is about 2.5% of the average capacitance.<BR>The substate temperature should be precisely controlled during RF-sputtering for the realization of the capacitor with excellent electrical characteristics. The high substrate temperature causes deterioration of Ta<SUB>2</SUB>O<SUB>5</SUB>, but the SiO<SUB>2</SUB> film deposited at low temperature has poor life stability and large capacitance change in moisture. The optimum substrate temperature is about 150 °C for the SiO<SUB>2</SUB> film deposition onto the anodic Ta<SUB>2</SUB>O<SUB>5</SUB> film.
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