オージェ電子分光法によるSi3N4膜中へのAlの拡散

概要

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Auger electron spectroscopy has been applied to the study of the aluminium diffusion into amorphous silicon nitride film (which contains a few atomic percents of impurity oxygen) on silicon dioxide. By heat treatment at 500°C for 30 min, aluminium is found to diffuse into the depth of 300Å, where the concentration becomes below 5 × 1019 atoms/cm3. The activation energy of the diffusion and the diffusion coefficient are 2.0 eV and 7.3 × 10-3 cm2/sec, respectively. The KLL-aluminium Auger spectrum and the in-depth profile of impurities indicate that the migration of aluminium is dominated by the volume diffusion which involves the reaction of aluminium and oxygen.
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