斜め入射イオンエッチングによるパターン形成
スポンサーリンク
概要
- 論文の詳細を見る
Ion-beam etched pattern profiles for an oblique ion-beam incidence have been investigated. The ion-beam etching was performed using a Kaufman type ion gun and a rotating stage. Etched patterns show a unique side wall profile due to ion-beam, shadowing effect. The side wall angle discontinuously changes at the half point of the total etching depth. As the ion-beam incident angle increases, the bottom wall angle becomes lower, while the upper wall angle approaches normal to the sample plane. The bottom wall profile can be interpreted by a theoretical model, taking into consideration the time dependent ion-beam flux distribution. The lateral shift of the upper wall can be explained by considering both etching and redeposition.
- 日本真空協会の論文