プレナ-型プラズマエッチャ-によるクロムのエッチング特性
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概要
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This paper described the etching characteristics of chromium film in the planar type plasma reactor. In addition, the etch rate of electron beam (EB) resists and the anomalous etched chromium films will also be discussed.<BR>Under the conditions when the gas pressure is 27 Pa, the gas flow rate ratio of CCl<SUB>4</SUB> to O<SUB>2</SUB> is 0.5, the electrode separation is 80 mm and the rf power density of 0.38 W/cm<SUP>2</SUP> is applied to the lower electrode at 13.56 MHz, the following results are obtained. (1) The etch rate of chromium film is about 30 nm/min, the etch rate of both the polystyrene and the epoxy type EB resists are about 15 nm/min and 60 nm/min, respectively. (2) Resistance of the polystyrene type EB resist for the plasma etching is the same or better than that of AZ-1350 photoresist. (3) The standard deviation (3σ) of the chromium feature size within 6-inch Cr-mask is 0.169 μm. (4) The anomalous etched chromium films include a little impurity of copper.
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