三次元回路素子における低温エピタキシー

概要

論文の詳細を見る
To fabricate three dimensional ICs, an epitaxy technology that is usable under 900°C is required. For this purpose, new fabrication technologies for single crystal silicon, insulating layers, and electrode films have been investigated. As a result, desirable single crystal films in the structure of Si/Si, Si/sapphire and MoSi2/Si were obtained by means of ionization vapor deposition (IVD) at 750°C at the deposition rate as high as 0.5 μm/min. The impurity concentration of the film is controllable, and the mobility has been reached nearly to the bulk Si level. On the other hand, single crystal films in the structure of MgO·Al2O3/Si were obtained at the deposition temperature of 900°C by means of CVD epitaxy. Using these two epitaxy methods (IVD and CVD), single crystal films in the structure of Si/MgO ·Al2O3/Si have been fabricated successfully.