酸化物ターゲットを用いたDCスパッタITO膜

概要

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Indium tin oxide (ITO) films were deposited by DC magnetron sputtering using ITO targets. Low resistivity of 1.4×10-4 Ω·cm and high transmittance of 85% at 550 nm were obtained under optimum conditions, depending on a SnO2 content (020 wt.%) in the ITO targets, substrate temperature, and oxygen partial pressure. Films with the low resistivity can be obtained in rather wide sputtering conditions in comparison with in using metal targets. Due to a change in the sputtering conditions, especially the substrate temperature, the optimum SnO2 content in the target was changed. When the substrate was at room temperature, the film with a resistivity of 4.0×10-4 Ω ·cm was prepared for the target of 5 wt.%SnO2, and at 400°C a film with 1.4×10-4 Ω·cm was prepared for the target with 10 wt.%SnO2, with good reproducibility. In these cases, decreasing of SnO2 content in the films was found and (400) preferential orientation of indium oxide (In2O3) was observed in the films by X-ray diffraction technique.
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