混晶成長を制御するもの--原子的モデルの提案

概要

論文の詳細を見る
Growth process of semiconductor alloy in atomic scale is studied basing on the experimental results of compositional non-uniformity which is formed around a macrostep riser or in the region of facet to off-facet transition. The non-uniformity is measured by spatially resolved photoluminescence (SRPL) at liquid nitrogen temperature. It is found that the local composition varies with the change in the propagation velocity of atomical step. To understand this, a model is proposed, in which the step edge is assumed to have a different composition to the bulk value (step edge segregation) and this step edge composition is frozen in to give the final bulk composition.
日本結晶学会の論文