Crystallization of Sputter Deposited Amorphous Ti-52at%Al Alloy.
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概要
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The crystallization process of amorphous Ti-52at%Al alloy was studied using sputter deposited materials. The crystallization occurred at about 800K accompanying the abrupt drop in an electrical resistivity <I>vs</I>. temperature curve. From changes in X-ray and electron diffraction patterns due to annealing at 800K, the crystallization sequence was represented as Amorphous(Ti–52at%Al)–α(hcp)–α<SUB>2</SUB>(DO<SUB>19</SUB>)–γ(L1<SUB>0</SUB>).From the analyses of lattice parameter, the crystallization was considered to be an isoconcentrational process. The formation of metastable phases in preference to the stable γ(L1<SUB>0</SUB>) one was well predicted by the kinetic analysis in terms of relative nucleation rate assuming that the free energy of amorphous phase was lower than that of undercooled liquid by 3.5 kJ/mol.
- The Iron and Steel Institute of Japanの論文
著者
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Abe Taichi
National Institute For Materials Science
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Onodera Hidehiro
National Institute For Materials Science
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Onodera Hidehiro
National Research Institute For Metals
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Abe Taichi
National Research Institute for Metals
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Akiyama Satoshi
Graduate School, Kougakuin University
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