高周波バイアススパッタにおけるDLC薄膜/基材界面の構造変化と耐磨耗特性

概要

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The interface structure between diamond-like carbon (DLC) and a silicon substrate was modified by application of rf substrate bias immediately before film deposition during magnetron sputtering. Results clarified that the oxide layer on silicon was removed while the mean roughness of the substrate surface was maintained at around 0.1 nm at 300 V or greater negative bias voltage. A ball-on-disk test revealed that this pretreatment increased the abrasion-proof length by a factor of 20. Cross-sectional Auger electron spectroscopy and X-ray photoelectron spectroscopy revealed formation of a mixed layer of carbon and silicon at the interface.