A Novel 100ppm/°C current reference for ultra-low-power subthreshold applications
スポンサーリンク
概要
- 論文の詳細を見る
We proposed a novel temperature-compensated, ultra-low-power current reference based on two β-multipliers whose resistors are replaced by nMOS devices operated in the deep triode region. The circuit, designed by a 0.25µm CMOS process, produces an output reference current of 13.7nA at room temperature. Simulated results show that the temperature coefficient of the output is less than 100ppm/°C in the range from -20°C to 80°C and the average power dissipation is 0.9µW.
論文 | ランダム
- エレクトロガスおよびエレクトロスラグ溶接の熱変形対策
- 鋼構造物に発生するぜい性破壊の研究-3-
- 鋼構造物に発生する脆性破壊の研究-1-
- Geographie romanesque dans Le mas Theotime de Henri Bosco
- 鋼材の溶接残留応力の常温における経時変化