Highly-integrable K-band power dividers based on digital CMOS technology
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概要
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In this paper, we present two-way and four-way power dividers that operate in wideband over K-band. To maximize the integrability with other circuit blocks, the power dividers are designed in a purely digital CMOS technology without any RF back-end-of-line process. We discuss a design issue arising from the high loss of transmission lines in the digital process. A capacitor-loaded Wilkinson topology is adopted for a compact size. The proposed dividers are implemented in a 0.13-µm digital CMOS process with automatic dummy metal fills. We also analyze the effect of the dummy fills on the power divider performance, showing good agreement with measured results.
著者
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Park Sanggu
School of Electrical Engineering, Korea University
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Jeong Jinho
Department of Electronic Engineering, Sogang University
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Jeon Sanggeun
School of Electrical Engineering, Korea University
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