低エネルギーイオンエッチングを用いたビットパターン媒体用1Tdot/in2級 Co-Ptドットアレイの作製

概要

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Dot arrays of Co-Pt with a dot density of 1 Tdot/in2 were fabricated using electron beam writing. Low-energy ion etching was used to prevent the dots from deteriorating the magnetic properties. We found from the magnetic properties measured using x-ray magnetic circular dichroism that etching with low-energy ions not only caused little damage to the magnetization but also that the anisotropy field of the dots resulted in high coercivity. These results demonstrate the effectiveness of etching with low-energy ions to achieve bit-patterned media with an areal density of 1 Tbit/in2. Furthermore, the magnetic dot array with a dot period of 25 and 30 nm was fabricated by electron beam writing and etching with low-energy ion. Coercivity of these dot arrays was found to be more than 5kOe.