A High-Throughput On-Chip Variation Monitoring Circuit for MOSFET Threshold Voltage Using VCDL and Time-to-Digital Converter
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概要
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A high-throughput on-chip monitoring circuit with a digital output is proposed for the variations of the NMOS and PMOS threshold voltages. A voltage-controlled delay line (VCDL) and a time-to-digital converter (TDC) are used to convert a small difference in analog voltage into a large difference in time delay. This circuit was applied to the transistors of W = 10µm and L = 0.18µm in a 16 × 16 array matrix fabricated with a 0.18-µm process. The measurement of the threshold voltage shows that the maximum peak-to-peak intra-chip variation of NMOS and PMOS transistors are about 31.7mV and 32.2mV, respectively, for the temperature range from −25°C to 75°C. The voltage resolutions of NMOS and PMOS transistors are measured to be 1.10mV/bit and 3.53mV/bit at 25°C, respectively. The 8-bit digital code is generated for the threshold voltage of a transistor in every 125ns, which corresponds to the 8-MHz throughput.
著者
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LEE Jae-seung
Pohang University of Science and Technology (POSTECH)
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SIM Jae-Yoon
Pohang University of Science and Technology (POSTECH)
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PARK Hong
Pohang University of Science and Technology (POSTECH)
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