Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si3N4

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The paper presents a systematic study of in-situ passivated AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) with submicron gates. DC, high frequency small signal, large signal and low frequency dispersion effects are reported. The DC characteristics are analyzed in conjunction with the power performance of the device at high frequencies. Studies of the low frequency characteristics are presented and the results are compared with those of AlGaN/GaN High Electron Mobility Transistors (HEMTs). Small signal measurements showed a current gain cutoff frequency and maximum oscillation frequency of 49.9GHz and 102.3GHz respectively. The overall characteristics of the device include a peak current density of 335mA/mm, peak extrinsic transconductance of 130mS/mm, a maximum output power density of 533mW/mm with peak power added efficiency (P.A.E.) of 41.3% and linear gain of 17dB. The maximum frequency dispersion of transconductance and output resistance of the fabricated MISFETs is 20% and 21% respectively.