SiCウェハ製造に関する最近の動向
スポンサーリンク
概要
- 論文の詳細を見る
Recent development and current status on the growth technology of silicon carbide (SiC) single crystals, long-known as a promising wide bandgap semiconductor material applicable to electronic devices of higher performance, are briefly described. The micropipe defect density, which is known to cause fatal problems in SiC devices, has been reduced significantly, and up to date no longer cited as the most harmful defect for device applications. In addition, such technological advance has led to the increase of the crystal diameters up to 100mm, evoking acceleration of SiC device productions.
論文 | ランダム
- 1バーレル100ドルに克つ技術革命--「脱デジタル化」で省資源社会は実現する (特集 石油高騰は日本のチャンス)
- ファンドの暴走から国益を守る (特集 大丈夫か! これからの日本)
- COX-2と癌予防 (癌の化学予防最前線)
- 催眠術と疾病
- 217 ヒトトロホブラスト及び絨毛癌細胞におけるclass II HLAの遺伝子発現