パワー半導体デバイスの最新技術動向

概要

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Global warming is already a problem in the world, highly effective use for energy is important. Power semiconductor devices are key components in saving energy, and improvements of performance are strongly demanded. Nowadays, Power MOSFET and IGBT those are the Si devicec are improved by technological developments such as Super Junction and FS-IGBT, and the performance nears the limit. On the other hand, SiC and GaN those are the wide band gap semiconductor devices have potential that greatly exceed the performance limitation of the Si devices, but have still problems, such as long term reliability and costs. This paper presents recent technology trend in Power devices, and those latest reports.