An SOI bulk-micromachined dual SPDT RF-MEMS switch by layer-wise separation design of waveguide and switching mechanism
スポンサーリンク
概要
- 論文の詳細を見る
A compact monolithic RF-MEMS switch (2mm × 4mm in area) with the dual single-pole-double-throw (SPDT) configuration was developed by using the SOI bulk micromachining technique. The electrostatic comb-drive actuators and the mechanically movable coplanar waveguides were implemented on the low-resistive active SOI layer and the high-resistive handle layer, respectively, to effectively allocate the device footprint. Electrical crosstalk between the waveguide and the electrostatic actuator was suppressed by using the buried silicon dioxide layer. At a driving voltage of 35V, the switch exhibits an insertion loss of 3dB and isolation of 30dB at 12GHz.
- The Institute of Electronics, Information and Communication Engineersの論文
著者
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Toshiyoshi Hiroshi
Center For International Research On Micro Mechatronics (cirmm) With Institute Of Industrial Science
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Fujita Hiroyuki
Center for International Research on Micro Mecharonics, Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Seita Harunobu
Research Institute for Humanosphere, Kyoto University
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Yamane Daisuke
Center for International Research on Micro Mechanics, Institute of Industrial Science, The University of Tokyo
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Sun Winston
Center for International Research on Micro Mechanics, Institute of Industrial Science, The University of Tokyo
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Kawasaki Shigeo
Institute of Space and Astronautical Science, Japan Aerospace Exploration
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Fujita Hiroyuki
Center for International Research on Micro Mechanics, Institute of Industrial Science, The University of Tokyo
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Toshiyoshi Hiroshi
Center for International Research on Micro Mechanics, Institute of Industrial Science, The University of Tokyo
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