Application of Si-N Insulating Layer to CPP-GMR Device
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概要
- 論文の詳細を見る
Tb-Fe-Co, an RE-TM alloy, is a promising material for perpendicular magnetic CPP-GMR devices. Because the spontaneous magnetization of RE-TM alloy can be controlled by its composition, the magnetic field generated from the pinned layer can be reduced by using a Tb-Fe-Co alloy film for the pinned layer. However, Tb-Fe-Co oxidizes easily. In this study, we applied a Si-N insulating layer to a CPP-GMR device in place of a SiO2 protective layer and successfully improved the magnetic characteristics of the Tb-Fe-Co pinned layer.
- 社団法人 日本磁気学会の論文
著者
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NAKAGAWA S.
Department of Internal Medicine, School of Medicine, Keio University
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Funabashi N.
Science & Technology Reseach Laboratories, NHK
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Aoshima K.
Science & Technology Reseach Laboratories, NHK
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Machida K.
Science & Technology Reseach Laboratories, NHK
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Kuga K.
Science & Technology Reseach Laboratories, NHK
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Shimidzu N.
Science & Technology Reseach Laboratories, NHK
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Funabashi N.
Science & Technology Reseach Laboratories, NHK
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Aoshima K.
Science & Technology Reseach Laboratories, NHK
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