A Look-ahead Active Body-biasing scheme for SOI-SRAM with dynamic VDDM control
スポンサーリンク
概要
- 論文の詳細を見る
Instability of SRAM memory cells derived from aggressive technology scaling has become one of the most significant issues. Although lowering the supply voltage for a memory cell (VDDM) improves a write margin, which increases the access time. In this paper, we propose a memory cell employing a Look-ahead Active Body-biasing (LAB) scheme for SOI-SRAM with the dynamic VDDM control. Simulation results have shown that the proposed SRAM cell shortens the access time by 54% in the write mode, while expanding read and write margins and reducing effects of variations in the threshold voltage on them.
論文 | ランダム
- 静注用γ-グロブリン(ヴェノグロブリン)使用による各種感染症の治療成績
- Synthesis of a Lectin in Both Mycelia and Fruit Bodies of the Ascomycete Mushroom Aleuria aurantia
- Formation of 5,10-Dihydrophenazine from Phenazine by Pseudomonas cepacia IFO 15124 at Low Oxygen Tensions
- APU日本語上級学習者に対するメディア利用に関する意識調査報告
- ネット上の性情報に対する規制とメディア・リテラシー教育のあり方の国際比較 (特集 ネット時代のメディア・リテラシー)