A pre-emphasis output buffer control scheme for a GDDR3 SDRAM interface

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概要

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• The keys to good signal integrity in a Graphic DDR3 (GDDR3) SDRAM interface for a bandwidth up to 1.4Gbps/pin are the minimization of input/output pin capacitance and the accurate control of the output data skew. The proposed pre-emphasis output buffer control scheme provides output data skew minimization without an increase of input/output pin capacitance. Compared to the conventional scheme, the output data aperture window of proposed scheme has increased by 18% and the data output skew has decreased by 48%.

著者

• Sung Man

  Dept. Of Electrical Engineering Korea Univ.

• Hwang Sang

  Dept. of Electrical Engineering, Korea University

• Jun Young

  DRAM Design Team, Memory Division, Samsung Electronics Co., Ltd.

関連論文

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