正・負高電圧パルス型プラズマ利用イオン注入法によるSi含有DLC膜の作製と評価(II) : 正パルスの波高値と耐熱性, 摩擦摩耗特性

概要

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We found that the optimal Si content of thermally stable Si-DLC film made by plasma based ion implantation technique with positive-negative high voltage pulses was about 21 at%. The technique can heat up specimens by electron bombardment with controlling the positive pulse voltage. In order to find the optimal positive pulse voltage in the process, we have examined the effects of the pulse voltage on several mechanical properties, such as internal stress, hardness, friction coefficient and wear resistance with controlling the positive pulse voltage as 2, 4 and 6.3 kV. The temperature increased, and internal stress and hardness decreased, with increasing the pulse voltage. The Si-DLC film with 4 kV pulses (about 570 K) is the largest thickness, the lowest friction coefficient and the highest wear resistance. The film has kept very low friction coefficient even after the annealing of 870 K, 3.6 ks in the Air.
社団法人粉体粉末冶金協会の論文
2006-08-15