Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots
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概要
American Institute of Physics | 論文
- Influence of film composition in Co2MnSi electrodes on tunnel magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions
- Tunneling anisotropic magnetoresistance in epitaxial CoFe/n-GaAs junctions
- Highly spin-polarized tunneling in fully epitaxial Co2Cr0.6Fe0.4Al/MgO/Co50Fe50 magnetic tunnel junctions with exchange biasing
- Tunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co2MnGe thin film and MgO tunnel barrier
- Structural and magnetic properties of epitaxially grown full-Heusler alloy Co2MnGe thin films deposited using magnetron sputtering