Precipitation control and activation enhancement in boron-doped p + -BaSi2 films grown by molecular beam epitaxy

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Precipitation free boron (B)-doped as-grown p + -BaSi2 layer is essential for the BaSi2 p-n junction solar cells. In this article, B-doped p-BaSi2 layers were grown by molecular beam epitaxy on Si(111) substrates, and the influence of substrate growth temperature (T S) and B temperature (T B) in the Knudsen cell crucible were investigated on the formation of B precipitates and the activation efficiency. The hole concentration, p, reached 1.0 × 1019 cm−3 at room temperature for T S = 600 and T B = 1550 °C. However, the activation rate of B was only 0.1%. Furthermore, the B precipitates were observed by transmission electron microscopy (TEM). When the T S was raised to 650 °C and the T B was decreased to 1350 °C, the p reached 6.8 × 1019 cm−3, and the activation rate increased to more than 20%. No precipitation of B was also confirmed by TEM.
American Institute of Physicsの論文