Passivation quality of a stoichiometric SiN_x single passivation layer on crystalline silicon prepared by catalytic chemical vapor deposition and successive annealing
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概要
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A silicon nitride (SiN_x) single passivation layer, prepared by catalytic chemical vapor deposition (Cat-CVD) and successive annealing, shows high passivation quality on crystalline silicon (c-Si) wafers. Effective minority carrier lifetime (τ_<eff>) monotonically increases with increase in deposition substrate temperature (T_s) for samples passivated by as-deposited SiN_x films, while more significant increase in τ_<eff> by annealing tends to be seen for the samples with SiN_x films deposited at lower T_s. The τ_<eff> obtained for the sample deposited at T_s of 100℃ and pressure (P) of 10 Pa, after annealing at 350℃ for 30 min in N_2, is about 3.0 ms, corresponding to a surface recombination velocity (SRV) of 5.0 cm/s. According to measured H content and fixed charge density (Q_f) in the SiN_x films, Q_f partly contributes to the passivation quality of the films particularly before annealing, while H content plays an important role on improving passivation quality of the films after annealing.
- The Japan Society of Applied Physicsの論文
- 2014-01-22
The Japan Society of Applied Physics | 論文
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