Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs Md.
スポンサーリンク
概要
- 論文の詳細を見る
Current collapse measurements have been performedfor AlGaN/GaN high-electron-mobility transistors havingidentical breakdown voltages but with different field plate(FP) lengths. The results indicated that applying more positiveON-state gate biases resulted in pronounced recovery in thedynamic ON-resistance for the FP device, whereas no gate-biaseffects were observed for the device without FP. The mechanismresponsible for the reduced current collapse by FP is proposed,in which the key role is played during ON-state by the quick fieldeffectrecovery of partial channel depletion caused by electrontrapping at AlGaN surface states between gate and drain.
- Institute of Electrical and Electronics Engineersの論文
Institute of Electrical and Electronics Engineers | 論文
- Ambipolar Coulomb Blockade Characteristics in a Two-Dimensional Si Multidot Device
- Achieving efficiency and portability in systems software: a case study on POSIX-compliant multithreaded programs
- Generalized Wigner-Yanase skew information and generalized Fisher information
- A generalized skew information and uncertainty relation
- Simultaneous Imaging of Artery-Wall Strain and Blood Flow by High Frame Rate Acquisition of RF Signals