イオンプレーティング法による硫化亜鉛系薄膜型エレクトロルミネッセンス素子の作製及び素子材料の検討
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Thin films of ZnS: Mn prepared by RF-ion plating exhibited more bright electroluminescence than those prepared by RF-sputtering or electron beam deposition under supply of 200V AC with frequency of 5 kHz. Manganese sulfide (MnS) was better evaporation source than Mn halides or metallic Mn. The threshold voltage for luminescence is found to be lowered by using an oxide with a large induction coefficient as insulating layers which sandwich the phosphor layer. ZnS doped with TbF_3 exhibited greenish blue phosphor. The brightness of this electroluminescence device was similar level to that of ZnS: Mn.
- 九州大学大学院総合理工学研究科の論文
- 1988-12-31
九州大学大学院総合理工学研究科 | 論文
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