He イオン注入 Al 試料の He 再放出率測定と表面観察
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Re-emission ratios and the numbers of He atoms from He-ion-implanted Al disks have been measured with a He atom measurement system and the surface of them have been observed with a scanning electron microscope. The re-emission ratio from the Al samples preserved for a year in room temperature is negligibly small. It has been realized that helium is released through pinholes which are preferentially formed along grain boundaries of annealed Al after heating He-ion-implanted samples. Above 10^<16> He/cm^2 irradiation, the re-emission ratio is 100% and flakes are mostly found on the specimens. The results suggest that preservation of He-ion-implanted sample for calibration of a He atom measurement system and neutron irradiated doslimeters for a He-accumulation method is acceptable in room temperature and that protective method against leaking He from dosimeters placed in high temperature environment should be developed.
- 九州大学大学院総合理工学研究科の論文
- 1986-07-25
九州大学大学院総合理工学研究科 | 論文
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