a-C:H膜の電気的スイッチングと発光

概要

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Electrical switching behavior has been observed for the first time in a-C:H films prepared by rf glow discharge of C\_3_H\_8_. The device was made by sandwiching the a-C:H film between two electrical contacts. The threshold voltage for electrical switching is about 30 V for a 1 \mu\sec pulse and the current in the low resistance state depends on the resistance connected in series to the device. The switching speed is less than 20 nsec. The device in the low resistance state exhibits electroluminescence, having a broad spectral distribution extending from the near UV to the near IR region, with several sharp-line structures. The emission intensity increases linearly with the current.
長岡技術科学大学の論文
1986-10-01