GaAs及びGaP基板上のZnSエピタキシャル層の比較

概要

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ZnS layers grown on GaAs and GaP substrates at 600~700 \C\ by vapor phase epitaxy were compared by several methods, such as X ray diffraction, photoluminescence, transient thermoluminescence and electrical measurements. The epitaxial layer quality was found to be better for ZnS/GaAs than for ZnS/GaP from the comparison of the half widths of X ray diffraction curves. The electrical resistivities of both layers are less than 0.1\Omega\cm and the room temperature mobility values are 50~90 cm\^2^/v\ten\sec, similar for both layers. However, the temperature dependence of the carrier concentration showed a large difference between the two, indicating a high degree of compensation for Zns/GaAs in contrast to a low degree of compensation for ZnS/GaP. The activation energies of the donors cannot be considered to be the same for ZnS/GaAs and ZnS/GaP. This fact suggests that the inclusion of Ga impurities in the layers is not a simple substitution, although the origin of low electrical resistivity for both layers is assumed to be taken from Ga impurities detected with SIMS analysis. The photoluminescence and transient thermoluminescence results also suggest that the role of Ga impurities is different in these epitaxial layers.
長岡技術科学大学の論文
1985-09-20