パルスレーザー照射欠陥のEDXによる評価

概要

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Gettering effect of defects induced by pulsed laser irradiation is studied. Pulsed laser irradiated Si-wafer(back surface) is annealed at 800℃for 30min and intentionally contaminated by Cu diffusion. Cu atoms gettered by defects are analyzed by EDX (Energy Dispersive X-ray Spectroscopy). Each depth of 50μm, 100μm, 200μm, 300μm, 350μm from back surface is measured. From the results of depth profile, it was found that at the depth of 350μm, getter sinks were formed at the apart from the center and at the depth of the 200μm, were at the center part.
宮崎大学工学部の論文
2013-08-30