Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures
スポンサーリンク
概要
- 論文の詳細を見る
The electrical properties of thin-film transistors (TFTs) with ZnO channels which were deposited by radio-frequency magnetron sputtering at various oxygen partial pressures [p( O2)] are investigated. A negative shift of the turn-on voltage with a "hump" was observed, and donorlike traps were generated at intermediate energy levels from the conduction band when the ZnO channel was deposited at p(O2) below a critical pressure. Thermal desorption spectroscopy study revealed that the donorlike traps were generated when the ZnO film changed from O- to Zn-rich condition. The Zn-related native defects would be a possible origin of the donorlike traps generated at intermediate energy levels in the ZnO TFTs.
- Institute of Electrical and Electronics Engineers (IEEE)の論文
- 2010-11-00
Institute of Electrical and Electronics Engineers (IEEE) | 論文
- Analysis on Operation of a F-FET Memory With an Intermediate Electrode
- EXIT Chart-Aided Adaptive Coding for Multilevel BICM With Turbo Equalization in Frequency-Selective MIMO Channels
- Iterative Frequency Domain Joint-over-Antenna Detection in Multiuser MIMO
- An Analytical Method for MMSE MIMO Turbo Equalizer EXIT Chart Computation
- Multilevel-Coded QAM With MIMO Turbo-Equalization in Broadband Single-Carrier Signaling