Molecularbeamepitaxy of BaSi2thinfilms on Si(001) substrates

概要

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An attempt was made to grow BaSi2 epitaxial films on Si(001) substrates using molecularbeamepitaxy. The structure and morphology of the films were investigated using reflection high-energy electron diffraction, X-ray diffraction, electron backscatter diffraction, atomic force microscopy, and transmission electron microscopy. The BaSi2film grown was a-axis oriented, despite a large lattice mismatch. The measurements indicated that there are two possible epitaxial relationships of BaSi2(100)//Si(001) with BaSi2[010]//Si[110] and BaSi2[001]//Si[110], due to the fourfold symmetry of Si(001). X-ray reciprocal space mapping revealed that the BaSi2film was almost strain-free. Plan-view transmission electron microscopy clarified the grain size and the existence of grain boundaries in the BaSi2film.