Influence of growth temperature on growth of InGaAs nanowires in selective-area metal-organic vapor-phase epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
Indium-rich InGaAs nanowires were grown on an InP (111)B substrate by catalyst-free selective-area metal-organic vapor phase epitaxy, and its growth-temperature dependence of growth rate and composition was studied. In particular, nanowire growth rate rapidly decreases as growth temperature increases. This tendency is opposite (for a similar temperature range) to that found in a previous study on selective-area growth of gallium-rich InGaAs nanowires. This difference between indium-rich and gallium-rich nanowires suggests that the influence of growth temperature on the growth of InGaAs nanowires is dependent on the group-III supply ratio. On the basis of previous experimental observations in InAs and GaAs nanowires, temperature dependence of nanowire growth rate and its dependence on group-III supply ratio are predicted. A guideline to determine the optimum growth conditions of InGaAs nanowires is also discussed.
- 2012-01-01
論文 | ランダム
- 実効レバレッジを考慮すると、現行10〜20倍の取引にも影響 (特集 投資家保護と規制の均衡点) -- (FX規制 私はこうみる)
- FX規制 私はこうみる (特集 投資家保護と規制の均衡点)
- 財務戦略 FX2【藤安醸造】 創業138年の超老舗が実践する"変動損益計算"の効用
- 財務戦略 FX2【エムケイホーム】 精緻な店舗別管理で増収増益路線を確立する
- 私はFXで地獄の淵を覗いた!--人気漫画家の1000万円が蒸発した日 特別対談 金子勝(慶応大学経済学部教授)×西原理恵子(漫画家)