High thermoelectric performance of Cu substituted type-VIII clathrate Ba8Ga16-xCuxSn30 single crystals

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概要

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• Single crystalline samples of type-VIII clathrate Ba_8Ga_<16-x>Cu_xSn_<30> (0 ≤x ≤ 0.033) were prepared by the Sn-flux method. Upon substituting Cu for Ga, the carrier mobility at 300 K increases twice while the carrier density stays in the range 3.1-4.2×10^<19>/cm3. Consequently, the electrical resistivity is decreased from 5.3 mΩcm for x=0 to 3.2 mΩcm for x=0.033. Irrespective of x, the Seebeck coefficient is largely negative and linearly changes with temperature in the range 300<T<600 K. The thermal conductivity is in the range 0.68-0.74 W/Km at 300 K for all samples. The dimensionless figure of merit ZT for x=0.033 reaches the maximum of 1.35 at 540 K.

• 2011-05-18

著者

• 加治佐 洸介

  広島大院先端物質

関連論文

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