Chapter4
スポンサーリンク
概要
- 論文の詳細を見る
- 2011-03-22
論文 | ランダム
- Formation of p-Type Hg_Cd_Te Epilayers Grown on CdTe Buffer Layers on GaAs (211) B due to In Situ Thermal Annealing
- Hydrogenation and Annealing Effects on Deep Levels in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates : Semiconductors
- A Study of Photoelectrochemical Oxidation of GaN Epilayers by Extrinsic Photoconductivity : Semiconductors
- Activation Energy, Capture Cross Section, and Emission Frequency of the Trap Level in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates in a Nitrogen-Rich Atmosphere
- Annealing Effect on Passivated Deep Levels in GaN Epilayers