Low Resistivity Metal Lines Formed by Functional Liquids and Successive Treatment of Catalytically Generated Hydrogen Atoms in Cat-CVD System
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Metal-interconnection amang electrdes is an inportant process to fabricate electronic devices. A novel high-speed technique using silver(Ag) functional loquid to form Ag lines is proposed. For improvement of eletrical conductivity of the Ag lines, Tomic hydrogen(H) generated by Cat-CVD system is used. There is a sintering phenomenon amang Ag nanoparticles(~50nm) duirng H treatment at low substrate temperatures(~100C). Scanning electron microscopy(SEM) reveals that the Ag grain size increases with H annealing duration, which results in the resistivity of the Ag lines on the order of 10^<-6> Ω cm.
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