Advantage of Plasma-Less Deposition in Cat-CVD to the Performance of Electronic Devices
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概要
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Advantage of plasma-less deposition in catalytic chemical vapor deposition (Cat-CVD) is demonstrated in performance of amorphous-silicon (a-Si) thin-film transistors (TFTs), by comparing with a-Si TFTs fabricated by plasma-enhanced CVD (PECVD). Cat-CVD a-Si TFTs show 2 or 3 orders of magnitude lower off-current than PECVD ones. Exposure of Cat-CVD TFTs to an argon or a hydrogen plasma severely increases their off-current, while the off-current recovers by chemically etching the plasma-damaged surface layer. It is concluded that PECVD damages the a-Si surface to a depth of several tens of nm, whereas Cat-CVD induces no serious damage to the film surface and therefore induces no deterioration of electrical properties.
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