Electrolytic Etching of n -Type GaN Films Using Sodium Hydroxide
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概要
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Electrolytic etching. of high quality GaN films grown by metalorganic chemical vapor deposition (MOCVD) on a sapphire substrate using a sodium hydroxide (NaOH) electrolyte is reported on. Factors such as the concentration of dissolved oxygen in the NaOH electrolyte affecting the GaN surface are discussed. It is found that the reduction of the concentration of dissolved oxygen in the NaOH electrolyte accelerates the rate of electrolytic etching of GaN films. The effect of decreasing the concentration of dissolved oxygen in the electrolyte is to reduce the amount of gallium hydroxide formed on the GaN surface. It seems that the concentration of dissolved oxygen in the NaOH electrolyte plays an important role in the electrolytic etching of n-GaN films.
- 福井大学工学部の論文
福井大学工学部 | 論文
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