サブミクロンMOSFETにおける2次元表面電位分布による閾値電圧の解析

概要

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Theretical study has been perlormed for the noma1 and the short-channel MOSFET's by solving the two-dimensional Poisson's equation. The value of the minimum potenti and the minimum potentia1 point in the channel region related with draine voltage are calculated，which leads us to estimate the value of the threshold voltage. The drain current dependence on the gate voltage is investigated for the subthreshold region and reasonable results are obtained.It is considered that the method proposed in this paper is a reasonable one for the threshold voltage modeling of submicronmeter MOSFET's.
福井大学工学部の論文