Photoluminescence and photoluminescence excitation spectra from AlN doped with Gd3+
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概要
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The photoluminescence (PL) spectra from Al0.98Gd0.02N andAl0.87Gd0.13N consisting of Gd3+ related 3.95 eV sharp emis-sion lines and other bands, and the PL excitation (PLE) spec-tra from 3 to 7 eV have been investigated by using a highly linear polarized synchrotron radiation light source. The Gd related 3.95 eV sharp lines in the PL spectra are similar to those in other cathodoluminescence (CL) and PL research. However, the broad emission bands around 3.95 eV lineswhich are normally found in other CL works are not ob- served. Other broad emission bands are clearly observed in the energy region of 1.5 ~ 3.5 eV. PLE spectra monitored at both the 3.95 eV sharp line and the broad emission band ofAl0.98Gd0.02N clearly indicate that these emission processes are host excitations which are reflected by an AlN-like band structure and crystalline anisotropy. On the other hand, the PLE and optical reflectance spectra of Al0.87Gd0.13N reveal an unclear band structure with a long band tail in the lower en-ergy side.
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