Surface electronic structure of ZrB_2 buffer layers for GaN growth on Si wafers

概要

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The electronic structure of epitaxial、 predominantly single-crystalline thin films of zirconium diboride (ZrB_2), a lattice-matching, conductive ceramic to GaN、 grown on Si(111) was studied using angle-resolved ultraviolet photoelectron spectroscopy. The existence of Zr-derived surface states dispersing along the Gamma-M direction indicates a metallic character provided by a two-dimensional Zr-layer at the surface. Together with the measured work function, the results demonstrate that the surface electronic properties of such thin ZrB_2(0001) buffer layers are comparable to those of the single crystals promising excellent conduction between nitride layers and the substrate in vertical light-emitting diodes on economic substrates.
2010-08-18