プラズマCVDプロセスにおける磁化SiH4プラズマの分光学的研究
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概要
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For the purpose of thickness control of large-area thin films, we propose new method using a cross magnetic field perpendicular to discharge electric fields in a parallel plate plasma CVD reactor. In a SiH4 (10%) / Ar AC glow discharge, time-averaged spectroscopic measurement showed that the profile control of not only ions but also neutral radicals was possible by varying both the magnetic field strength and the direction. Their emission intensity profiles were changed by the gas pressure, the discharge current, the distance from electrode top and the modulation waveform of magnetic field. The profile of the emission intensity from SiH radicals resembled the thickness profile of depositted amorphous silicon fijms on a substrate outside of the electrodes. The electron orbits were calculated by a computer in the presence of both magnetic and electric field. The calculated distributions of electron density agree with both those of film thickness and optical emission from SiH radicals.
- 長崎大学工学部の論文
長崎大学工学部 | 論文
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