Photoluminescence of GaAs single quantum wells confined by short-period all-binary GaAs/AlAs superlattices
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概要
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GaAs single quantum well heterostructures (SQWHs) composed of all-binary AlAs/GaAs heterostructures by using AlAs/GaAs short-period superlattices (SPS) instead of the ternary alloy as cladding layers were grown by molecular beam epitaxy at low substrate temperature. Detailed photoluminescence measurements at 2K reveal that these SPS confined SQWHs exhibit superior luminescence properties. They are therefore very attractive for application in new optoelectronic devices. The SPS configuration has a strong effect on the energy of the confined particle transition because of the fully interacting quantum well system
- Amer Inst Physicsの論文
- 1984-12-01
Amer Inst Physics | 論文
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