Dynamic domain observation in narrow thin films
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概要
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We examined a domain structure of high-frequency carrier-type thin-film magnetic field sensors that consist of narrow rectangular CoNbZr thin film to clarify a magnetization process of the sensor head. Moreover, the cause of disagreement between measured and calculated sensitivities was investigated. The measured impedance change of the sensor head can be explained qualitatively in consideration of the wall displacement owing to the growth of the closure domain.
- Institute of Electrical and Electronics Engineersの論文
- 2001-07-01
Institute of Electrical and Electronics Engineers | 論文
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