Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures
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概要
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The electronic properties of (In,Ga)N/GaN quantum wells fabricated by MOCVDvary significantly during investigations using low-energy electron beam irradiation (LEEBI) suchas cathodoluminescence (CL) if a certain exposure dose is exceeded. For unintentionally dopedstructures, we observe a simultaneous LEEBI-induced activation of donors and acceptors. Thus,the resistivity of the layers is not varied, while the quantum efficiency and optical transition energyincreases significantly by LEEBI. A p-n structure is turned towards flat band conditions duringLEEBI indicating an electron beam induced passivation of acceptors in the p-type layer.
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