Anomalous temperature dependence of the photoluminescence properties in GaAs triple quantum wells with growth islands
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We have investigated the effect of different cladding layer configurationson the photoluminescence (PL) properties of GaAs triple quantum wells (QWs)with different well thicknesses (Lz=7.8, 5.5, and 3.5 nm) embedded in Al0.17Ga0.83Asbarriers. In sample 1, the cladding layers consist of ternary alloy Al0.3Ga0.7As layers,while in sample 2 they are formed by GaAs/AlAs short period superlattices. At lowtemperatures, the cw PL spectra for sample 1 show a non-uniform intensitydistribution over the three QW excitionic lines. The PL intensity for the widest QW(7.8 nm) is much weaker than that for the other QWs. Furthermore, an anomaloustemperature dependence of the PL transients of the widest QW is observed, whichdiffers from the one expected for the excitonic radiative recombination lifetime.However, sample 2 exhibits the typical temperature dependence of the PL lifetime.The temperature dependence of the PL dynamics indicates that the non-uniformdistribution of the PL intensity at low temperatures in the former sample is a resultof a competition between carrier relaxation and capture processes.
- IOP Publishingの論文
- 2002-00-00
IOP Publishing | 論文
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