Electric-field dependence of luminescence spectra of (In,Ga)N/GaN LEDs containing quantum wells
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We have investigated the electric-field- and excitation-density-induced variation of the optical transition10 energy and cathodoluminescence (CL) as well as photoluminescence intensity of single and multiple11 (In,Ga)N/GaN quantum wells (QW) deposited in the depletion region of a p-n junction. The electric-field12 dependence of the CL intensity is governed by the competition between carrier drift within the depletion13 region and carrier capture by the QWs. A gradual screening of the p-n junction field with increasing exci14tation density causes a strongly nonlinear CL response. The electric-field dependence of the optical transi15tion energy is governed by a gradual compensation of the polarization field of the QWs by the p-n junc16tion field as well as by filling of band tail states of localized excitons. While the CL spectra of the QWs17 reflect radiative recombination of both free and localized excitons, EL spectra are dominated by the re18combination of localized excitons.
- Wiley Periodicals, Inc.の論文
- 2004-09-00
Wiley Periodicals, Inc. | 論文
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