Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes
スポンサーリンク
概要
- 論文の詳細を見る
Electroluminescence (EL) and photoluminescence (PL) properties have been investigated of the highbrightnessgreen InGaN single quantum well (SQW) diode over a wide temperature range (T = 15-300 K)and as a function of injection current level. When the necessary forward bias conditions to get a certaincurrent level are different, it is found the anomalous temperature-dependent EL efficiency varies quite differently.That is, when the current is low and thus the forward driving voltage is small, the EL quenchingobserved below 100 K for high injection current levels is less significant or even absent due to the efficientcarrier capture. This finding is consistent with decrease of the PL efficiency with increasing the biasover +2.5 V. These results indicate that the EL efficiency is significantly influenced by interplay of the internaland external fields effects on the carrier capture and escape processes in addition to the localizationphenomena caused by In fluctuations in the SQW layer.
- Wiley Periodicals, Inc.の論文
- 2006-02-00
Wiley Periodicals, Inc. | 論文
- Initial Stage of Fiber Structure Development in the Continuous Drawing of Poly(ethylene terephthalate)
- A generalization of the weighted Strichartz estimates for wave equations and an application to self-similar solutions
- Preparation of Emulsifier-Free Polystyrene by Conventional Emulsion Polymerization with a Hydrolysable Emulsifier
- Low-energy electron-beam irradiation of GaN-based quantum well structures
- Decrease in solvent evaporation rate due to phase separation in polymer films