Chemical States of Fluorine Atoms and Laser-Induced Crystallization in rf-Sputtered Thin Films of Amorphous Lead Fluorosilicate
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Amorphous films of lead oxyfluorosilicate were prepared with a rf-sputtering technique, and the distribution profiles of the component elements and chemical states of the fluoride ions were analyzed with an X-ray photoelectron spectrometer. Si atoms with an expanded coordination, O(4)Si-F, were present near the surface, and O(3)Si-F units were present in the deeper part of the films. Electrical resistance indicated transition to aconduction state for the films containing fluoride ions, while the films were crystallized to precipitate low quartz by the irradiation of He-Ne laser of 3 mW up to 1 sec.
- Faculty of Engineering, Okayama Universityの論文
- 1994-03-15
Faculty of Engineering, Okayama University | 論文
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