Hole-injection-type and electron-injection-type silicon avalanche photodiodes fabricated by standard 0.18-μm CMOS process
スポンサーリンク
概要
- 論文の詳細を見る
A hole-injection-type and an electron-injection-type Si avalanche photodiode (APD) were fabricated by a standard 0.18-μm complementary metaloxidesemiconductor process. The avalanche amplifications are observed below 10 V of the bias voltage, and the maximum avalanche gains were 493 and 417 for the hole-injection-type and the electron-injection-type APDs, respectively. The maximum bandwidth is 3.4 GHz, and the gain-bandwidth products were 90 and 180 GHz for the hole-injection-type and the electron-injection-type APDs, respectively. © 2006 IEEE.
- IEEE = Institute of Electrical and Electronics Engineersの論文
IEEE = Institute of Electrical and Electronics Engineers | 論文
- Finite-difference time-domain calculation with all parameters of Sellmeier's fitting equation for 12-fs laser pulse propagation in a silica fiber
- Comparison between theory and experiment of nonlinear propagation for a-few-cycle and ultrabroadband optical pulses in a fused-silica fiber
- Application of a spatial light modulator for programmable optical pulse compression to the sub-6-fs regime
- Programmable chirp compensation for 6-fs pulse generation with a prism-pair-formed pulse shaper
- Pulse compression using direct feedback of the spectral phase from photonic crystal fiber output without the need for the Taylor expansion method